tcmt11.. series/ tcmt4100 document number 83510 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 1 ce ac 4pi n 16 pi n 12 8 9 16467-1 c pb p b -free e3 optocoupler, phototransistor output, single/quad channel, half pitch mini-flat package features ? low profile package (half pitch) ac isolation test voltage 3750 v rms low coupling capacitance of typical 0.3 pf c urrent t ransfer r atio (ctr) selected into groups low temperature coefficient of ctr wide ambient temperature range lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e76222 system code m, double protection c-ul csa 22.2 bulletin 5a, double protection applications programmable logic controllers, modems, answering machines, general applications description the tcmt11.. series consist of a phototransistor optically coupled to a galliu m arsenide infrared-emit- ting diode in an 4- pin (single channel) up to 16- pin (quad channel) package. the elements are mounted on one leadframe provid- ing a fixed distance between input and output for high- est safety requirements. order information part remarks tcmt1100 ctr 50 - 600 %, smd-4 tcmt1102 ctr 63 - 125 %, smd-4 tcmt1103 ctr 100 - 200 %, smd-4 tcmt1104 ctr 160 - 320 %, smd-4 tcmt1105 ctr 50 - 150 %, smd-4 TCMT1106 ctr 100 - 300 %, smd-4 tcmt1107 ctr 80 - 160 %, smd-4 tcmt1108 ctr 130 - 260 %, smd-4 tcmt1109 ctr 200 - 400 %, smd-4 tcmt4100 ctr 50 - 600 %, quad channel, smd-16
www.vishay.com 2 document number 83510 rev. 1.6, 26-oct-04 tcmt11.. series/ tcmt4100 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input parameter test condition symbol value unit reverse voltage v r 6v forward current i f 60 ma forward surge current t p 10 si fsm 1.5 a power dissipation p diss 100 mw junction temperature t j 125 c parameter test condition symbol value unit collector emitter voltage v ceo 70 v emitter collector voltage v eco 7v collector current i c 50 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma power dissipation p diss 150 mw junction temperature t j 125 c parameter test condition symbol value unit ac isolation test voltage (rms) related to standard climate 23/ 50 din 50014 v iso 3750 v rms total power dissipation p tot 250 mw operating ambient temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t sld 240 c parameter test condition symbol min ty p. max unit forward voltage i f = 50 ma v f 1.25 1.6 v junction capacitance v r = 0 v, f = 1 mhz c j 50 pf
tcmt11.. series/ tcmt4100 document number 83510 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 3 output coupler current transfer ratio parameter test condition symbol min ty p. max unit collector emitter voltage i c = 100 av ceo 70 v emitter collector voltage i e = 100 av eco 7v collector dark current v ce = 20 v, i f = 0, e = 0 i ceo 100 na parameter test condition symbol min ty p. max unit collector emitter saturation voltage i f = 10 ma, i c = 1 ma v cesat 0.3 v cut-off frequency i f = 10 ma, v ce = 5 v, r l = 100 ? f c 100 khz coupling capacitance f = 1 mhz c k 0.3 pf parameter test condition part symbol min ty p. max unit i c /i f v ce = 5 v, i f = 5 ma tcmt1100 ctr 50 600 % v ce = 5 v, i f = 10 ma tcmt1102 ctr 53 125 % tcmt1103 ctr 100 200 % tcmt1104 ctr 160 320 % v ce = 5 v, i f = 5 ma tcmt1105 ctr 50 150 % TCMT1106 ctr 100 300 % tcmt1107 ctr 80 160 % tcmt1108 ctr 130 260 % tcmt1109 ctr 200 400 % tcmt4100 ctr 50 600 %
www.vishay.com 4 document number 83510 rev. 1.6, 26-oct-04 tcmt11.. series/ tcmt4100 vishay semiconductors switching characteristics parameter test condition symbol min ty p. max unit delay time v s = 5 v, i c = 2 ma, r l = 100 ? (see figure 1) t d 3.0 s rise time v s = 5 v, i c = 2 ma, r l = 100 ? (see figure 1) t r 3.0 s fall time v s = 5 v, i c = 2 ma, r l = 100 ? (see figure 1) t f 4.7 s storage time v s = 5 v, i c = 2 ma, r l = 100 ? (see figure 1) t s 0.3 s turn-on time v s = 5 v, i c = 2 ma, r l = 100 ? (see figure 1) t on 6.0 s turn-off time v s = 5 v, i c = 2 ma, r l = 100 ? (see figure 1) t off 5.0 s turn-on time v s = 5 v, i f = 10 ma, r l = 1 k ? (see figure 2) t on 9.0 s turn-off time v s = 5 v, i f = 10 ma, r l = 1 k ? (see figure 2) t off 18.0 s figure 1. test circuit, non-saturated operation figure 2. test circuit, saturated operation channel i channel ii 95 10804 r g = 50 t p t p = 50 p s t = 0.01 + 5 v i f 0 50 100 i f i c = 2 ma; adjusted through input amplitude oscilloscope r l = 1 m c l = 20 pf channel i channel ii 95 10843 r g =50 ? t p t p =50 s t = 0.01 +5v i c i f 0 50 1k i f =10ma oscilloscope r l c l 20 pf ? m 1 ? ? t p t t 0 0 10% 90% 100% t r t d t on t s t f t off i f i c 96 11698 t p pulse duration t d delay time t r rise time t on (= t d +t r ) turn-on time t s storage time t f fall time t off (= t s +t f ) turn-of f time
tcmt11.. series/ tcmt4100 document number 83510 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 5 typical characteris tics (tamb = 25 c unless otherwise specified) figure 4. total power dissipat ion vs. ambient temperature figure 5. forward current vs. forward voltage figure 6. relative current transfer ratio vs. ambient temperature 0 50 100 150 200 250 300 0 40 80 120 p Ctotal power dissipation ( mw ) t amb C ambient t emperature( c ) 96 11700 tot coupled device phototransistor ir-diode 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v f - forward voltag e(v) 96 11862 f i - forward current ( ma ) C25 0 25 50 0 0.5 1.0 1.5 2.0 ctr C relative current transfer ratio rel t amb C ambient temperature ( c ) 95 11025 75 v ce =5v i f =5ma figure 7. collector dark curre nt vs. ambient temperature figure 8. collector current vs. forward current figure 9. collector current vs . collector emitter voltage 0255075 1 10 100 1000 10000 i - collector dark current, ceo t amb - ambient temperature ( c) 100 95 11026 with open base ( na ) v ce =20v i f =0 0.1 1 10 0.01 0.1 1 100 i C collector current ( ma ) c i f C forward current ( ma ) 100 95 11027 10 v ce =5v 0.1 1 10 0.1 1 10 100 v ce C collector emitter voltag e(v) 100 95 10985 i C collector current ( ma) c i f =50ma 5ma 2ma 1ma 20ma 10ma
www.vishay.com 6 document number 83510 rev. 1.6, 26-oct-04 tcmt11.. series/ tcmt4100 vishay semiconductors figure 10. collector emitter sa turation voltage vs. collector current figure 11. current transfer ratio vs. forward current figure 12. turn on / off time vs. forward current 110 0 0.2 0.4 0.6 0.8 1.0 v C collector emitter saturation voltage (v) cesat i c C collector current ( ma ) 100 ctr=50% 20% 10% 95 11028 0.1 1 10 1 10 100 1000 ctr C current transfer ratio ( % ) i f C forward current ( ma ) 100 95 11029 v ce =5v 0 5 10 15 0 10 20 30 40 50 i f C forward current ( ma ) 20 95 11031 t / t Cturn on / turn off time ( s ) off on saturated operation v s =5v r l =1k ? t off t on figure 13.turnon/offtimes.collectorcurrent 02 4 6 0 2 4 6 8 10 i c C collector current ( ma ) 10 95 11030 t / t Cturn on / turn off time ( s ) off on non saturated operation v s =5v r l =100 ? t off t on
tcmt11.. series/ tcmt4100 document number 83510 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 7 package dimensions in mm 16283
www.vishay.com 8 document number 83510 rev. 1.6, 26-oct-04 tcmt11.. series/ tcmt4100 vishay semiconductors package dimensions in mm 15226
tcmt11.. series/ tcmt4100 document number 83510 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 9 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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